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| Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: www..com 2SK30A Gate Source Silicon N-Chinnel Junction FET Application: For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC electronic switch. Package example: Absolute Maximum Ratings (Ta=25) Parameter Gate to Drain voltage Gate to Source voltage Gate current Allowable power dissipation Junction Temperature Storage Temperature Symbol VGDO VGSO IG PD Tj Tstg Ratings -50 -50 10 250 125 -55 to +125 Unit V V mA mW * Package SC-59 SOT-23 TO-92S TO-92 TO-18 D S G 3 1 2 Electrical Characteristics (Ta=25) Prameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittamce Input capacitance (Common Source) Reverse transfer capacitance (Common Source) Symbol IDSS IGSS VGDS VGS(OFF) | Yfs | Ciss Crss Conditions VDS = 10V, VGS = 0V VGS= -30V, VDS = 0V IG = -100AVDS = 0V VDS = 10V, ID = 0.1A VDS= 10V = 0V= 1KHZ VGS f VDS= 10V = 0V = 1MHZ VGS f min 0.3 -50 -0.4 1.2 typ max 6.5 -1.0 -5.0 Unit mA nA V V mS pF pF 8.2 2.6 IDSS Rank Classification Runk IDSS(mA) Marking Symbol R 0.3 to 0.75 035D O 0.6 to 1.4 035E Y 1.2 to 3.0 035F GR 2.6 to 6.5 035G Xiaosheng Electronic & Telechnology CO. ,LTD. Tel: 86-021-64859219 Fax: 86-021-64859219 www.on-ele.org Email:xiaosheng_sh@126.com Room 206 3rd building 195-16 Tianlin RD. Shanghai China |
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